Home » All Products » Discrete Semiconductor Products » FETs - Single » FQD2N60CTF_F080
Product Category : FETs - Single
Description : MOSFET N-CH 600V 1.9A DPAK
Marketing Price : N/A
Our Price : Quote by Email
Datasheet : FQD2N60CTF_F080 Download
Internal Part Number | EIS-FQD2N60CTF_F080 | |
Condition | New & Unused, Original Sealed | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | QFET® | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) | |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 235pF @ 25V | |
Power - Max | 2.5W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | D-Pak | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | FQD2N60CTF_F080 | |
Related Links | FQD2N60, FQD2N60CTF_F080 Datasheet |